A PHOTO-INDUCED MEMORY EFFECT OBSERVED ON In-Si-Se SYSTEM
نویسندگان
چکیده
A photo-induced memory effect (a phenomenon similar to the persistent photoconductivity) was found in the photoinduced polycrystalline films of the In-Si-Se system. The photo-induced polycrystalline process was performed by irradiating the specimen ( the light intensity is 6 m~/cm2) at temperature 70°C. The conductivity drastically increased by irradiation of the light pulse (its intensity is 20yw/cm2) at low temperature (153 K) and entered a memory state. With increasing the temperature above a critical point (T=263 K), the conductivity returned to the original value. As the photo-induced memory effect is a reproducible phenomenon, it may be considered as an electronic effect and seems to be explained by the barrier model with various inhomogeneities in the polycrystalline films.
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